Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-29
2009-02-24
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S238000, C438S241000, C438S244000, C438S254000, C438S258000, C438S259000, C438S299000, C257SE21682
Reexamination Certificate
active
07494871
ABSTRACT:
A semiconductor memory device can include select transistors and cell transistors on a semiconductor substrate. An insulation layer covers the select transistors and the cell transistors. The bit lines are in the insulation layer and are electrically connected to respective ones of the select transistors. The bit lines are arranged along at least two different parallel planes having different heights relative to the semiconductor substrate.
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Choi Jeong-Hyuk
Lee Chang-Sub
Lee Woon-Kyung
Oh Dong-Yean
Song Jai-Hyuk
Lee Kyoung
Myers Bigel Sibley & Sajovec P.A.
Richards N Drew
Samsung Electronics Co,. Ltd.
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