Semiconductor memory devices and methods for forming the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S238000, C438S241000, C438S244000, C438S254000, C438S258000, C438S259000, C438S299000, C257SE21682

Reexamination Certificate

active

07494871

ABSTRACT:
A semiconductor memory device can include select transistors and cell transistors on a semiconductor substrate. An insulation layer covers the select transistors and the cell transistors. The bit lines are in the insulation layer and are electrically connected to respective ones of the select transistors. The bit lines are arranged along at least two different parallel planes having different heights relative to the semiconductor substrate.

REFERENCES:
patent: 6873007 (2005-03-01), Sugita et al.
patent: 2004/0212023 (2004-10-01), Umezawa et al.
patent: 63000141 (1988-01-01), None
patent: 2003-318289 (2003-11-01), None
patent: 2003332467 (2003-11-01), None
patent: 2004-111478 (2004-04-01), None
patent: 2004-119457 (2004-04-01), None
patent: 2004-228396 (2004-08-01), None
patent: 1020030057851 (2003-07-01), None

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