Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2006-10-30
2009-06-23
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S149000, C365S189120, C365S225700, C365S233100
Reexamination Certificate
active
07551495
ABSTRACT:
The example semiconductor memory device may include a memory cell, a storage unit configured to store at least one data pattern, a data output circuit configured to output the stored data during a first type of read operation and configured to output the at least one data pattern during a second type of read operation and an output control circuit for controlling the data output circuit such that the memory cell is not accessed during read operations of the second type. A first example method may include storing at least one data pattern in a storage unit, outputting the stored data within the memory cell in response to a first type of read operation and outputting the at least one data pattern in the storage unit in response to a second type of read operation and blocking access to the memory cell during read operations of the second type.
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Harness Dickey & Pierce
Ho Hoai V
Samsung Electronics Co,. Ltd.
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