Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2008-02-20
2010-11-23
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S208000
Reexamination Certificate
active
07839698
ABSTRACT:
A semiconductor memory device includes a memory core and an input/output circuit. The memory core amplifies a signal of a memory cell to output the amplified signal through an input/output line pair in a read mode, receives a signal of the input/output line pair to store in the memory cell in a write mode, and electrically separates a bit line pair from the input/output line pair in response to a read column selection signal, a write column selection signal and a first data masking signal. The input/output circuit buffers and provided a signal of the input/output line pair to input/output pins, receives input data from the input/output pins, and buffers the received input data to provide the buffered input data to the input/output line pair. Thus, the semiconductor device can perform a fast data writing operation.
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Joo Jong-Doo
Kim Jung-Han
Lee Cheol-Ha
Mills & Onello LLP
Nguyen Tuan T.
Samsung Electronics Co,. Ltd.
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