Semiconductor memory device including storage nodes and...

Details Semiconductor memory device including storage nodes and... Semiconductor memory device including storage nodes and...

2006-07-11

2006-07-11

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S256000, C438S381000, C438S384000, C438S396000, C438S399000

Reexamination Certificate

active

07074667

ABSTRACT:
A semiconductor memory device according to embodiments of the invention includes storage nodes and resistors. A method of manufacturing the semiconductor memory device according to some embodiments of the invention includes forming an interlayer insulation layer on a semiconductor substrate including a memory cell array area and a core/perimeter area; forming a first etch stop layer thereon; forming a plurality of contact plugs arranged linearly in at least one direction on the memory cell array area; forming a first conductive layer on the resultant structure; forming a second etch stop layer thereon; etching the second etch stop layer and the first conductive layer and forming landing pads and resistors arranged non-linearly in at least one direction; and forming storage nodes on the entire outer lateral surfaces of which are exposed, on the landing pads.

REFERENCES:
patent: 6890841 (2005-05-01), Lee et al.
patent: 2001/0009285 (2001-07-01), Bae et al.
patent: 2002-231901 (2002-08-01), None
patent: 1020000003644 (2000-01-01), None
patent: 2001-0076467 (2001-08-01), None
English language abstract of Korean Publication No. 1020000003644.
English language abstract of Japanese Publication No. 2002-231901.
English language abstract of Korean Publication No. 2001-0076467.

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