Memory with element redundancy

Error detection/correction and fault detection/recovery – Pulse or data error handling – Replacement of memory spare location – portion – or segment

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C714S718000, C365S200000

Reexamination Certificate

active

07076702

ABSTRACT:
A memory device to perform an erase operation algorithm that specifically deals with different types of defects in a memory array. The memory array of one embodiment of the present invention has primary and redundant elements. A register is used for each redundant element to store the address of a defective primary element and an error code that indicates the type of defect in the defective primary element. Control circuitry is used to control memory operations to the memory array. The control circuitry performs an erase operation algorithm that is specific to an error code when a defective primary element is addressed during an erase operation.

REFERENCES:
patent: 4899342 (1990-02-01), Potter et al.
patent: 5077736 (1991-12-01), Dunphy, Jr. et al.
patent: 5329488 (1994-07-01), Hashimoto
patent: 5359569 (1994-10-01), Fujita et al.
patent: 5392292 (1995-02-01), Davis et al.
patent: 5559742 (1996-09-01), Lee et al.
patent: 5602987 (1997-02-01), Harari et al.
patent: 5748527 (1998-05-01), Lee et al.
patent: 5796653 (1998-08-01), Gaultier
patent: 5917838 (1999-06-01), Wardrop
patent: 5995413 (1999-11-01), Holzmann et al.
patent: 6034891 (2000-03-01), Norman
patent: 6078534 (2000-06-01), Pfefferl et al.
patent: 6149316 (2000-11-01), Harari et al.
patent: 6351412 (2002-02-01), Nozoe et al.
patent: 6359806 (2002-03-01), Nozoe et al.
patent: 6469932 (2002-10-01), Roohparvar et al.
patent: 6505306 (2003-01-01), Blackmon et al.
patent: 6671214 (2003-12-01), Abedifard et al.
patent: 6711056 (2004-03-01), Abedifard et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory with element redundancy does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory with element redundancy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory with element redundancy will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3535169

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.