Static information storage and retrieval – Read/write circuit – Precharge
Patent
1988-04-25
1990-07-10
Fears, Terrell W.
Static information storage and retrieval
Read/write circuit
Precharge
365190, 365207, 36523001, G11C 1300
Patent
active
049411284
ABSTRACT:
A dynamic type RAM is provided wherein the level of a precharge control signal supplied to a gate of a precharge MOSFET to precharge complementary data lines to a half level is made the half level during a period from the memory access until the selection of the word line, at the latest. Also, the precharge control signal, corresponding to a memory mat selected according to establishing of an address, is set to a low level, while the precharge control signal corresponding to a non-selective memory mat is set to a high level.
REFERENCES:
patent: 4780852 (1988-10-01), Kajigaya et al.
patent: 4807190 (1989-02-01), Ishii et al.
Komatsu Nobuo
Mihashi Kazuo
Miyatake Sinichi
Takano Mitsuhiro
Tsukada Hiromi
Fears Terrell W.
Hitachi , Ltd.
Hitachi VLSI Engineering Corp.
LandOfFree
Semiconductor memory device having means for providing a prechar does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device having means for providing a prechar, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having means for providing a prechar will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1724951