Semiconductor memory device having COB structure and method...

Details Semiconductor memory device having COB structure and method... Semiconductor memory device having COB structure and method...

2005-03-08

2005-03-08

Dee, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S697000, C438S699000, C438S700000, C438S703000, C438S704000

Reexamination Certificate

active

06864179

ABSTRACT:
A fabrication method for forming a semiconductor device having COB (capacitor-over-bit line) structure is provided. A lower insulating film is formed on a substrate. Bit line patterns are formed on a portion of the lower insulating film. Each of the bit line patterns comprises a conductive bit line, a lower capping strip and an upper capping strip, which are sequentially stacked. Mask-defining layer is formed on the other portion of the lower insulating film. The upper capping strips are removed by wet etching technique to form a recess region. The lower capping strips and a portion of the mask-defining layer is etched isotropically to enlarge the recess region. An insulating mask is formed in the enlarged recess region. BC (buried contact) holes are formed substantially in self-aligned manner to the bit lines by using the mask as an etch mask. According to the present invention, the unfavorable electrical contact between the storage electrodes and the bit lines can be significantly relieved.

REFERENCES:
patent: 6159820 (2000-12-01), Park
patent: 6174782 (2001-01-01), Lee

Affiliated with

Also associated with

Rating

Semiconductor memory device having COB structure and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having COB structure and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having COB structure and method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3456280