Semiconductor memory device having an internal signal detector

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

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Details

36518903, 36518912, 365221, G11C 1134, G11C 1928

Patent

active

052650510

ABSTRACT:
An internal signal detector of a semiconductor memory device for detecting potential characteristics of internal signals representative of defective memory cells or circuits with an improved debugging operation having a plurality of first transfer transistors respectively tapped into a plurality of internal transmission lines connecting between the memory cells or circuits, for transferring selected internal signals in dependence upon a first control signal; a plurality of latch circuits respectively for latching potential characteristics of the selected internal signals; a plurality of second transfer transistors for transferring the latched potential characteristics of the selected signals in dependence upon a second control signal; and a shift register for transferring the latched potential characteristics of the selected internal signals to an exterior surface of the semiconductor memory device.

REFERENCES:
patent: 5022001 (1991-06-01), Kowalski et al.

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