Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-02-07
2008-12-09
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S221000
Reexamination Certificate
active
07463538
ABSTRACT:
We describe a semiconductor memory device having a precharge control circuit and an associated method for precharging the same. A semiconductor memory device having a series of circuits for writing data to memory cells includes an input and output line for transferring data to be written to each of the memory cells. A precharge control circuit is adapted to generate a precharge control signal for controlling a precharge disable state of the input and output line after application of a first write command. The disable state of the precharge control signal is maintained even after application of a second write command when performing a continuous write operation responsive to the second write command application without other commands applied subsequent to the first write command application. Avoiding precharging the input and output line in a continuous write operation, reduces current consumption.
REFERENCES:
patent: 5784329 (1998-07-01), Blankenship et al.
patent: 6771550 (2004-08-01), Park
patent: 7151696 (2006-12-01), Suh et al.
Marger & Johnson & McCollom, P.C.
Nguyen Van-Thu
Samsung Electronics Co,. Ltd.
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