Semiconductor memory device comprising transistor having...

Details Semiconductor memory device comprising transistor having... Semiconductor memory device comprising transistor having...

2007-05-08

2010-11-30

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Read/write circuit

Precharge

C365S051000, C365S204000, C365S230020, C365S230060

Reexamination Certificate

active

07843750

ABSTRACT:
A semiconductor memory device including a transistor having a vertical channel structure is provided. The device includes a first sub memory cell array including a first memory cell connected to a first bit lines and including a transistor having a vertical channel structure, a second sub memory cell array including a second memory cell connected to a first inverted bit lines and including a transistor having a vertical channel structure, and a plurality of precharge blocks. In addition, first and second precharge blocks are disposed at first and second sides of the first bit line and precharge the first bit line, and third and fourth precharge blocks are disposed at first and second sides of the first inverted bit line and precharge the first inverted bit line.

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