Semiconductor memory device and method of reading data from...

Static information storage and retrieval – Read/write circuit – Precharge

Reexamination Certificate

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C365S210130

Reexamination Certificate

active

06839295

ABSTRACT:
A semiconductor memory device and method of reading data from the semiconductor memory device is described. The semiconductor memory device may generate a data read clock signal that changes from a first logic state to a second logic state, and may read out bit cell data from a plurality of bit lines based on the generated data read clock signal. A word line signal and a dummy word line signal may be activated from the first logic state to the second logic state based on incoming X-address signals and Y-address signals. An enable signal may be output based on the activated dummy word signal, and a sense amplifier may sense the read-out bit cell data and a reference signal based on the activated enable signal, and output a corresponding to the sensed read-out bit cell data.

REFERENCES:
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patent: 6229746 (2001-05-01), Tooher
patent: 6490214 (2002-12-01), Kawasumi
patent: 6577548 (2003-06-01), Barth et al.
patent: 6674668 (2004-01-01), Ikehashi et al.
patent: 6717877 (2004-04-01), Suzuki et al.

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