Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2005-01-04
2005-01-04
Phan, Trong (Department: 2818)
Static information storage and retrieval
Read/write circuit
Precharge
C365S210130
Reexamination Certificate
active
06839295
ABSTRACT:
A semiconductor memory device and method of reading data from the semiconductor memory device is described. The semiconductor memory device may generate a data read clock signal that changes from a first logic state to a second logic state, and may read out bit cell data from a plurality of bit lines based on the generated data read clock signal. A word line signal and a dummy word line signal may be activated from the first logic state to the second logic state based on incoming X-address signals and Y-address signals. An enable signal may be output based on the activated dummy word signal, and a sense amplifier may sense the read-out bit cell data and a reference signal based on the activated enable signal, and output a corresponding to the sensed read-out bit cell data.
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Harness Dickey
Phan Trong
Samsung Electronics Co,. Ltd.
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