Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-13
2005-12-13
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
06974986
ABSTRACT:
A semiconductor memory device and manufacturing method, including a bit line connector and a lower electrode connector that respectively connect a bit line and a capacitor lower electrode of the device to active areas of a semiconductor substrate. The connectors are formed using a line-type self-aligned photoresist mask pattern positioned on an interlevel dielectric layer formed on the substrate, which exposes only a portion of the dielectric layer corresponding to a source region and which extends in a direction which a gate electrode extends, to provide a misalignment margin. The bit line connector and the lower electrode connector are respectively formed by one-time mask processes. A contact hole for the bit line connector in a cell area, and a contact hole for a metal wiring plug in a peripheral area are simultaneously formed, alleviating etching burden during subsequent forming of a metal wiring pad.
REFERENCES:
patent: 3655438 (1972-04-01), Sterling et al.
patent: 5893734 (1999-04-01), Jeng et al.
patent: 6087694 (2000-07-01), Ohno et al.
patent: 6215144 (2001-04-01), Saito et al.
patent: 6222217 (2001-04-01), Kunikiyo
patent: 6255160 (2001-07-01), Huang
patent: 6258649 (2001-07-01), Nakamura et al.
patent: 6359301 (2002-03-01), Kuroda
patent: 6548845 (2003-04-01), Koike
patent: 6737314 (2004-05-01), Kunikiyo
Kim Jeong-seok
Kim Ji-soo
Shin Kyoung-sub
Dolan Jennifer M
Jr. Carl Whitehead
Samsung Electronics Co,. Ltd.
Volentine Francos & Whitt PLLC
LandOfFree
Semiconductor memory device and method of manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device and method of manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and method of manufacturing the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3479921