Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2006-09-12
2006-09-12
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S189080, C365S191000
Reexamination Certificate
active
07106634
ABSTRACT:
A semiconductor memory device selects data strobe types according to an operating mode. The buffer selection circuit selects one of a first operating mode and a second operating mode, and generates an output buffer control signal and an input buffer control signal. The output buffer reads first data stored in the memory cell array, and outputs the first data to the input/output pad under the control of the output buffer control signal. The input buffer receives second data from the input/output pad, and writes the second data to the memory cell array under the control of the input buffer control signal. Accordingly, the semiconductor memory device is capable of transmitting data both in the bilateral strobe type and in the unilateral strobe type.
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English language abstract of Korean publication No. 1998-016286.
Dinh Son T.
Marger & Johnson & McCollom, P.C.
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