Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-14
2008-12-09
Wojciechowicz, Edward (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S618000, C438S622000, C438S629000, C438S640000, C438S652000, C438S666000, C438S778000
Reexamination Certificate
active
07462523
ABSTRACT:
A conductive portion connects a lower conductive layer formed on a semiconductor substrate provided in a first interlayer insulating layer to an upper conductive layer formed on the lower conductive layer, and provided in a second interlayer insulating layer. This portion is divided into at least one plug and a pad. At least one plug is formed in a first interlayer insulating layer and the lower part of a second interlayer insulating layer. The second interlayer insulating layer is divided into a plurality of interlayer insulating layers so that upper and lower widths of the divided plugs formed in the divided portion of the second interlayer insulating layer are not greatly different from each other. The pad formed on the upper portion of the second interlayer insulating layer has an upper width such that the upper conductive layer connected to the pad is not undesirably connected to an adjacent upper conductive layer via the pad.
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Stanley Wolf“Silicon Processing For The VLSI ERA” vol. 3 the submicron Mosfet, 1995 pp. 4.
Jeong Hong-Sik
Kim Ki-Nam
Song Sang-Hoo
Yang Won-Suk
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
Wojciechowicz Edward
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