Semiconductor memory device and method for accessing a memory in

Static information storage and retrieval – Read/write circuit – Precharge

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36523003, 3652385, G11C 700

Patent

active

056894708

ABSTRACT:
A semiconductor memory device includes a plurality of memory cells arranged in a matrix, each of which has a gate electrode, a first electrode and a second electrode. The semiconductor memory device includes a plurality of word lines, at least one of which is connected to the gate electrode of one of the plurality of memory cells; a plurality of bit lines, at least one of which is connected to the first electrode of one of the plurality of memory cells and a plurality of virtual ground lines, at least one of which is connected to the second electrode of one of the plurality of memory cells. The semiconductor memory device also includes a determination circuit for generating a determination signal based on an address signal, and a precharge and access circuit for applying one of a first voltage and a second voltage to at least one of the plurality of bit lines and applying one of a third voltage and a fourth voltage to at least one of the plurality of virtual ground lines, wherein the voltage applications are based on the determination signal.

REFERENCES:
patent: 5295099 (1994-03-01), Kagami
patent: 5430672 (1995-07-01), Kuwabara et al.
patent: 5453955 (1995-09-01), Sakui et al.
patent: 5592426 (1997-01-01), Jallice et al.

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