Semiconductor memory device and defect remedying method thereof

Details Semiconductor memory device and defect remedying method thereof Semiconductor memory device and defect remedying method thereof

2006-03-21

2006-03-21

Elms, Richard (Department: 2824)

Static information storage and retrieval

Read/write circuit

Multiplexing

C365S230030, C365S051000, C365S063000, C438S586000, C438S587000, C257S202000, C257S203000

Reexamination Certificate

active

07016236

ABSTRACT:
A semiconductor memory device formed on a semiconductor chip comprises a plurality of first memory arrays, a plurality of second memory arrays, a first voltage generator, and a plurality of first bonding pads. The semiconductor chip is divided into a first rectangle region, a second rectangle region, and a third rectangle region and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The plurality of first memory arrays are formed in the first rectangle region. The plurality of second memory arrays are formed in the second rectangle region. The voltage generator and the plurality of first bonding pads are arranged in the third rectangle region. The plurality of first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the plurality of second memory arrays.

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