Semiconductor memory circuit device and method for fabricating a

Details Semiconductor memory circuit device and method for fabricating a Semiconductor memory circuit device and method for fabricating a

1997-02-13

2000-03-28

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 218242

Patent

active

060431180

ABSTRACT:
In a semiconductor memory circuit device wherein each memory cell is constituted by a series circuit of a memory cell selecting MISFET and an information storing capacitor of a stacked structure, there are present in a first region as a memory cell array region a first MISFET having a gate electrode and source and drain regions; first and second capacity electrodes and a dielectric film extending onto a first insulating film on the gate electrode; a second insulating film positioned on the second capacity electrode; and a first wiring positioned on the second insulating film, while in a second region as a peripheral circuit region there are present a second MISFET having a gate electrode and source and drain regions; a first insulating film on the gate electrode; a third insulating film on the first insulating film; a second insulating film on the third insulating film; and a second wiring on the second insulating film.

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IEDM 88, pp. 592-595.

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