Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-12-29
2010-02-16
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S230030, C365S207000, C365S189180, C365S189190
Reexamination Certificate
active
07663951
ABSTRACT:
A semiconductor memory apparatus includes a main bank configured to combine a first sub bank and a second sub bank. A center bitline sense amplifier array is arranged in a region where the first sub bank meets the second sub bank. A first precharge section is arranged above the first sub bank and a second precharge section is arranged below the second sub bank. The first precharge section precharges local input/output lines of the first sub bank and the second sub bank and the second precharge section precharges the local input/output lines.
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Hynix / Semiconductor Inc.
Kaminski Jeffri A.
Le Thong Q
Venable LLP
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