Semiconductor integrated circuit devices

Details Semiconductor integrated circuit devices Semiconductor integrated circuit devices

2011-06-14

2011-06-14

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27060, C257SE29256

Reexamination Certificate

active

07960785

ABSTRACT:
A semiconductor integrated circuit device may include: a substrate that includes a high-voltage device region and a low-voltage device region defined on the substrate; a first buried impurity layer formed in at least a portion of the high-voltage device region and coupled to a first voltage; a second buried impurity layer formed in at least a portion of the low-voltage device region and coupled to a second voltage less than the first voltage; and a well formed on the second buried impurity layer in the low-voltage device region and coupled to a third voltage less than the second voltage.

REFERENCES:
patent: 6376891 (2002-04-01), Nagatani et al.
patent: 2005-038962 (2005-02-01), None
patent: 2005-303138 (2005-10-01), None
patent: 10-2007-0069552 (2007-07-01), None

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