Semiconductor integrated circuit device with capacitor of...

Details Semiconductor integrated circuit device with capacitor of... Semiconductor integrated circuit device with capacitor of...

2006-07-11

2006-07-11

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S255000, C438S396000

Reexamination Certificate

active

07074669

ABSTRACT:
A semiconductor integrated circuit device includes a plurality of capacitor elements, which are separated from each other by a first insulating film on a plane. Each of the plurality of capacitor elements has a lower electrode, a dielectric film, and an upper electrode, and the lower electrode has a crown structure. At least one of the lower electrode and the upper electrode has a laminate structure composed of a plurality of conductive films. An outermost film of the laminate structure on a side of the dielectric film is a ruthenium film, and a portion of the laminate structure other than the outermost film has higher selective growth than the first insulating film with respect to the ruthenium film. Here, the first insulating film is desirably a tantalum oxide film.

REFERENCES:
patent: 2001/0041402 (2001-11-01), Yamamoto
patent: 2002/0146882 (2002-10-01), Hong
patent: 2002/0192896 (2002-12-01), Matsui et al.
patent: 11-274431 (1999-10-01), None
patent: 2000-150827 (2000-05-01), None

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