Semiconductor integrated circuit arrangement fabrication method

Details Semiconductor integrated circuit arrangement fabrication method Semiconductor integrated circuit arrangement fabrication method

1999-06-23

2000-06-13

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438744, H01L 2100

Patent

active

06074958&

ABSTRACT:
To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.

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