Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-05-09
2006-05-09
Yoha, Connie C. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S201000, C365S202000, C365S205000
Reexamination Certificate
active
07042780
ABSTRACT:
Provided are a semiconductor integrated circuit including a unit which detects soft defects in a pull-up circuit of a static memory cell, and a soft defect detection method and a testing method thereof. The semiconductor integrated circuit includes a static memory cell, a bit line connected to a first node of the static memory cell and a complementary bit line connected to a second node of the static memory cell, and an equalization circuit connected to the bit line and the complementary bit line to equalize the bit line and the complementary bit line in response to a test signal during a test mode. The semiconductor integrated circuit and the soft defect detection method can rapidly detect soft defects in the pull-up circuit of the static memory cell without a retention test. Furthermore, the testing method can rapidly detect soft defects in the pull-up circuit of the static memory cell, allowing the test time to be drastically reduced.
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Mills & Onello LLP
Samsung Electronics Co,. Ltd.
Yoha Connie C.
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