Semiconductor devices including buried bit lines

Details Semiconductor devices including buried bit lines Semiconductor devices including buried bit lines

2010-06-01

2010-12-07

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S287000, C438S528000, C438S664000

Reexamination Certificate

active

07846796

ABSTRACT:
A semiconductor device includes a plurality of channel structures on a semiconductor substrate. A bit line groove having opposing sidewalls is defined between sidewalls of adjacent ones of the plurality of channel structures. A plurality of bit lines are formed on corresponding ones of the opposing sidewalls, and the plurality of bit lines are electrically isolated from each other

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English language abstract of Japanese Publication No. 2001-0042141.
English language abstract of Korean Publication No. 2001-0112829.
English language abstract of Japanese Publication No. 2002-508594.

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