Semiconductor devices having tensile and/or compressive...

Details Semiconductor devices having tensile and/or compressive... Semiconductor devices having tensile and/or compressive...

2011-03-15

2011-03-15

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21328, C438S197000, C438S308000, C438S795000

Reexamination Certificate

active

07906384

ABSTRACT:
A semiconductor device having a tensile and/or compressive strain applied thereto and methods of manufacturing the semiconductor devices to enhance channel strain. The method includes relaxing a gate structure using a low temperature thermal creep process to enhance channel strain. The gate structure undergoes a plastic deformation during the low temperature thermal creep process.

REFERENCES:
patent: 2005/0136583 (2005-06-01), Chen et al.
patent: 2009/0227084 (2009-09-01), Wu et al.
Morin et al., “Mechanisms of Stress Generation within a Polysilicon Gate for nMOSFET performance Enhancement”, Materials Science and Engineering B 135 (2006) 215-219.

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