Semiconductor devices having a convex active region and...

Details Semiconductor devices having a convex active region and... Semiconductor devices having a convex active region and...

2006-12-20

2009-06-09

Nguyen, Tu T (Department: 4126)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07544565

ABSTRACT:
Methods of forming a semiconductor device include forming a trench mask pattern on a semiconductor substrate having active regions and device isolation regions. A thermal oxidation process is performed using the trench mask pattern as a diffusion mask to form a thermal oxide layer defining a convex upper surface of the active regions. The thermal oxide layer and the semiconductor substrate are etched using the trench mask pattern as an etch mask to form trenches defining convex upper surfaces of the active regions. The trench mask pattern is removed to expose the convex upper surfaces of the active regions. Gate patterns are formed extending over the active regions.

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