Semiconductor devices and methods of fabricating the same

Details Semiconductor devices and methods of fabricating the same Semiconductor devices and methods of fabricating the same

2006-07-11

2006-07-11

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S682000, C438S723000, C257SE21619, C257SE21006

Reexamination Certificate

active

07074683

ABSTRACT:
A semiconductor device comprises a device isolation layer disposed in a portion of a substrate of first conductivity type. An outline of the device isolation layer defines an active region of the substrate. An impurity diffused region of second conductivity type may be formed in a portion of the active region; and a silicide layer may be formed to cover the impurity diffused region of second conductivity type. The device isolation layer may include a recess formed therein to expose a portion of the substrate of first conductivity type adjacent to the impurity diffused region of second conductivity type. The silicide layer that is formed to cover the impurity diffused layer of second conductivity type may extend over and against the exposed region of the substrate of first conductivity type that was exposed by the recess of the device isolation layer.

REFERENCES:
patent: 5741735 (1998-04-01), Violette et al.
patent: 6627502 (2003-09-01), Cho
patent: 2001-0065747 (1999-12-01), None
patent: 2001-65747 (2001-07-01), None
patent: 2001-77099 (2001-08-01), None
English translated Korean patent publication (Kr 2001-0065747 A ).
English language of Abstract for Korean Patent Publication No. 2001-77099 published Aug. 17, 2001.
English language of Abstract for Korean Patent Publication No. 2001-65747 published Jul. 11, 2001.

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