Semiconductor devices and methods for fabricating the same

Details Semiconductor devices and methods for fabricating the same Semiconductor devices and methods for fabricating the same

2007-08-21

2007-08-21

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S592000, C438S532000, C257SE21623

Reexamination Certificate

active

11029993

ABSTRACT:
Disclosed are semiconductor devices and methods for fabricating the same. According to one embodiment, the method includes sequentially forming a gate insulation layer and a conductive layer on a semiconductor substrate. A buried impurity region is then formed in the semiconductor substrate. Thus, the gate insulation layer is formed before forming the buried impurity region, thereby substantially reducing impurity diffusion that can be caused by a thermal process for forming the gate insulation layer. In addition, the gate insulation layer is not exposed, thus protecting the gate insulation layer from being recessed.

REFERENCES:
patent: 5210042 (1993-05-01), Oshikawa
patent: 5384478 (1995-01-01), Hong
patent: 5648289 (1997-07-01), Park
patent: 5994745 (1999-11-01), Hong
patent: 6087699 (2000-07-01), Wann et al.
patent: 6395606 (2002-05-01), Huster et al.
patent: 2000-0076517 (2000-12-01), None
English language abstract of Korean Publication No. 2000-0076517.

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