Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-15
2006-08-15
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S303000, C438S587000, C438S695000, C438S184000, C438S230000, C438S197000, C257S288000, C257S355000
Reexamination Certificate
active
07091098
ABSTRACT:
A semiconductor device including a gate stack located over a substrate and a spacer located over the substrate and adjacent the gate stack. The spacer includes a plurality of layers, wherein at least one of the plurality of layers is a batch layer and at least one of the plurality of layers is a non-batch layer.
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Chen Yen Ming
Wu Lin Jun
Haynes and Boone LLP
Sarkar Asok K.
Taiwan Semiconductor Manufacturing Company , Ltd.
Yevsikov Victor V.
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