Semiconductor device with silicided source/drains

Details Semiconductor device with silicided source/drains Semiconductor device with silicided source/drains

2007-08-28

2007-08-28

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S527000, C438S660000, C438S682000

Reexamination Certificate

active

10718892

ABSTRACT:
In a semiconductor device, a relatively deep germanium implant and activation thereof precedes deposition of the nickel for nickel silicide formation. The activation of the germanium causes the lattice constant in the region of the implant to be increased over the lattice constant of the background substrate, which is preferably silicon. The effect is that the lattice so altered avoids formation of nickel disilicide. The result is that the nickel silicide spiking is avoided.

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Ohguro et al., “Nitrogen-doped Nickel Monosilicide Technique for Deep Submicron CMOS Salicide,” IEEE 1995, pp. 453-456.

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