Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-01-18
2011-01-18
Geyer, Scott B (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S329000
Reexamination Certificate
active
07871887
ABSTRACT:
A semiconductor device comprises buried bit lines which are formed to be brought into contact with drain areas of vertical pillar transistors. The buried bit lines are arranged along a first direction in a silicon substrate. The buried bit lines are formed of epi-silicon to reduce the resistance of the buried bit lines.
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Baek Seung Joo
Kim Kyung Do
Geyer Scott B
Hynix / Semiconductor Inc.
Ladas & Parry LLP
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