Semiconductor device with multiple channels

Details Semiconductor device with multiple channels Semiconductor device with multiple channels

2006-09-07

2009-08-25

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21415

Reexamination Certificate

active

07579657

ABSTRACT:
A semiconductor device with multiple channels includes a semiconductor substrate and a pair of conductive regions spaced apart from each other on the semiconductor substrate and having sidewalls that face to each other. A partial insulation layer is disposed on the semiconductor substrate between the conductive regions. A channel layer in the form of at least two bridges contacts the partial insulation layer, the at least two bridges being spaced apart from each other in a first direction and connecting the conductive regions with each other in a second direction that is at an angle relative to the first direction. A gate insulation layer is on the channel layer, and a gate electrode layer on the gate insulation layer and surrounding a portion of the channel layer.

REFERENCES:
patent: 6855606 (2005-02-01), Chen et al.
patent: 2003/0057486 (2003-03-01), Gambino et al.
patent: 2004/0036128 (2004-02-01), Zhang et al.
patent: 2005/0056892 (2005-03-01), Seliskar
patent: 2005/0142721 (2005-06-01), Koh
patent: 2003-347434 (2003-12-01), None

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