Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Patent
1997-12-15
2000-09-12
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
257782, H01L 2348, H01L 2352, H01L 2940
Patent
active
061181838
ABSTRACT:
To provide a type of semiconductor device with high resistance to cracks and having fewer manufacturing steps. Semiconductor device 1 has a substrate having insulating base material 2 mainly made of a thermoplastic polyimide resin. When heated to a temperature above the glass transition temperature, the surface of insulating base material 2 made of thermoplastic polyimide resin melts and exhibits the properties of an adhesive. The adhesive layer is preferred for laminating the metal film for forming conductor pattern 3, and it is preferred for fixing semiconductor IC chip 4 to insulating base material 2 made of thermoplastic polyimide resin. When semiconductor IC chip 4 is fixed on insulating base material 2 made of thermoplastic polyimide resin, the two are brought into contact with each other under a prescribed pressure, and the atmospheric temperature is higher than the glass transition temperature for bonding. Frame 6 made up of a metal lead frame is arranged on the periphery of the insulating base material for reinforcing insulating base material 2 made of thermoplastic polyimide resin.
REFERENCES:
patent: 5757078 (1998-05-01), Matsuda et al.
patent: 5801446 (1998-09-01), DiStefano et al.
patent: 5844320 (1998-12-01), Ono et al.
patent: 5866951 (1999-02-01), Gademann et al.
patent: 5892288 (1999-04-01), Muraki et al.
patent: 5905303 (1999-05-01), Kata et al.
Amagai Masazumi
Umehara Norito
Brady III W. James
Clark Sheila V.
Laws Gerald E.
Telecky Jr. Frederick J.
Texas Instruments Incorporated
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