Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-07
2009-11-03
Purvis, Sue (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21633
Reexamination Certificate
active
07611939
ABSTRACT:
There is presented a method of forming a semiconductor device. The method comprises forming gate structures including forming gate electrodes over a semiconductor substrate and forming spacers adjacent the gate electrodes. Source/drains are formed adjacent the gate structures, and a laminated stress layer is formed over the gate structure and the semiconductor substrate. The formation of the laminated stress layer includes cycling a deposition process to form a first stress layer over the gate structures and the semiconductor substrate and at least a second stress layer over the first stress layer. After the laminated layer is formed, it is subjected to an anneal process conducted at a temperature of about 900° C. or greater.
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Kohli Puneet
Mehrotra Manoj
Rotondaro Antonio L. P.
Brady III Wade J.
Franz Warren L.
Purvis Sue
Sandvik Benjamin P
Telecky , Jr. Frederick J.
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