Semiconductor device manufactured by reducing hillock...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

Other Related Categories

C438S627000, C438S628000, C438S660000, C438S937000, C427S299000

Type

Reexamination Certificate

Status

active

Patent number

07745335

Description

ABSTRACT:
A method of fabricating an interconnect structure, comprising exposing an empty deposition chamber to a process that includes generating reactive species produced from a source gas in the presence of a plasma. The method further comprises terminating the plasma and then introducing a semiconductor substrate with a metal layer thereon into the chamber while the reactive species are present in the chamber.

REFERENCES:
patent: 6346489 (2002-02-01), Cohen et al.
patent: 6764951 (2004-07-01), van Ngo

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