Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-21
2010-06-29
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S628000, C438S660000, C438S937000, C427S299000
Reexamination Certificate
active
07745335
ABSTRACT:
A method of fabricating an interconnect structure, comprising exposing an empty deposition chamber to a process that includes generating reactive species produced from a source gas in the presence of a plasma. The method further comprises terminating the plasma and then introducing a semiconductor substrate with a metal layer thereon into the chamber while the reactive species are present in the chamber.
REFERENCES:
patent: 6346489 (2002-02-01), Cohen et al.
patent: 6764951 (2004-07-01), van Ngo
Chevacharoenkul Sopa
Jin Changming
Kim Tae Seung
Rao Satyavolu Papa
Ruan Ju-Ai
Brady III Wade J.
Brown Valerie
Franz Warren L.
Nguyen Ha Tran T
Telecky , Jr. Frederick J.
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