Semiconductor device having transistor and method of...

Details Semiconductor device having transistor and method of... Semiconductor device having transistor and method of...

2006-06-13

2006-06-13

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S388000, C257S389000, C257S390000

Reexamination Certificate

active

07060575

ABSTRACT:
A method of forming self-aligned contact holes exposing source/drain regions in a semiconductor substrate using only etch mask layers is provided. In the method, sacrificial spacers are formed of a material having an excellent etching selectivity to the etch mask layers at sidewalls of gate electrodes in a cell area. Also, an interlevel dielectric layer is formed of a material having an excellent etching selectivity to the etch mask layers. The sacrificial spacers are removed when forming the self-aligned contact holes. Dielectric spacers are formed of a material having a low dielectric constant, without considering its etching selectivity to the interlevel dielectric layer. Thus, a reduction in the operational speed of a semiconductor device having transistors can be prevented.

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