Semiconductor device having through vias

Details Semiconductor device having through vias Semiconductor device having through vias

2007-11-06

2009-10-13

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With electrical contact in hole in semiconductor

C257S626000, C257SE23010, C438S637000, C438S667000

Reexamination Certificate

active

07602047

ABSTRACT:
A method of fabricating a semiconductor device is provided. The method may include forming an insulating layer on a wafer. The wafer may have an active surface and an inactive surface which face each other, and the insulating layer may be formed on the active surface. A pad may be formed on the insulating layer, and a first hole may be formed in the insulating layer. A first hole insulating layer may then be formed on an inner wall of the first hole. A second hole may be formed under the first hole. The second hole may be formed to extend from the first hole into the wafer. A second hole insulating layer may be formed on an inner wall of the second hole. The semiconductor device fabricated according to the method may also be provided.

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