Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-25
2006-04-25
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S302000, C438S233000
Reexamination Certificate
active
07033879
ABSTRACT:
The present invention provides, in one embodiment, a method of fabricating a semiconductor device (100). The method comprises growing an oxide layer (120) on a gate structure (114) and a substrate (102) and implanting a dopant (124) into the substrate (102) and the oxide layer (120). Implantation is such that a portion of the dopant (124) remains in the oxide layer (120) to form an implanted oxide layer (126). The method further includes depositing a protective oxide layer (132) on the implanted oxide layer (126) and forming etch-resistant off-set spacers (134). The etch-resistant off-set spacers (134) are formed adjacent sidewalls of the gate structure (114) and on the protective oxide layer (132). The etch resistant off-set spacers having an inner perimeter (135) adjacent the sidewalls and an opposing outer perimeter (136). The method also comprises removing portions of the protective oxide layer (132) lying outside the outer perimeter (136) of the etch-resistant off-set spacers (134). Other embodiments of the present invention include a transistor device (200) and method of manufacturing an integrated circuit (300).
REFERENCES:
patent: 2002/0068410 (2002-06-01), Tseng et al.
patent: 2005/0121750 (2005-06-01), Chan et al.
B. Hornung, et al.; “A High Performance 90 nm Logic Technology with A 37nm Gate Length, Dual Plasma Nitrided Gate Dielectric and Differential Offset Spacer”: 2003 Symposium on VLSI Technology.
Chakravarthi Srinivasan
Chidambaram Beriannan
Hornung Brian E.
Robertson Lance S.
Zhang Xin
Brady III W. James
Keagy Rose Alyssa
Lebentritt Michael
Lindsay Jr. Walter L.
Telecky , Jr. Frederick J.
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