Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-04-12
2005-04-12
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S588000, C257SE21182
Reexamination Certificate
active
06878580
ABSTRACT:
A semiconductor device having a gate with a negative slope and a method of manufacturing the same. A poly-SiGe layer with a Ge density profile which decreases linearly from the bottom of the gate toward the top of the gate is formed and a poly-SiGe gate having a negative slope is formed by patterning the poly-SiGe layer. It is possible to form a gate whose bottom is shorter than its top defined by photolithography by taking advantage of the variation of etching characteristics with Ge density when patterning. Accordingly, the gate is compact enough for a short channel device and gate resistance can be reduced.
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IBM Technical Disclosure Bulletin, Jun. 1991, US.
Bae Geum-jong
Kim Ki-chul
Kim Sang-su
Lee Jung-il
Lee Nae-in
F. Chau & Associates LLC
Fourson George
Pham Thanh V
Samsung Electronics Co,. Ltd.
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