Semiconductor device having enhanced photo sensitivity and...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S060000, C438S144000, C438S424000, C438S425000, C438S439000, C438S786000, C257SE21551

Reexamination Certificate

active

10818312

ABSTRACT:
Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.

REFERENCES:
patent: 5585653 (1996-12-01), Nakashiba
patent: 5869383 (1999-02-01), Chien et al.
patent: 6130422 (2000-10-01), Bawolek et al.
patent: 6162745 (2000-12-01), Ito et al.
patent: 6372603 (2002-04-01), Yaung et al.
patent: 6617174 (2003-09-01), Rotstein
patent: 6635396 (2003-10-01), Honeycutt et al.
patent: 6946352 (2005-09-01), Yaung
patent: 7038232 (2006-05-01), Yaung et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device having enhanced photo sensitivity and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having enhanced photo sensitivity and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having enhanced photo sensitivity and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3850046

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.