Semiconductor device having capacitor and method of...

Details Semiconductor device having capacitor and method of... Semiconductor device having capacitor and method of...

2006-11-06

2010-10-26

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C438S714000, C438S739000, C438S740000, C257SE21014, C257SE21252, C257SE21648, C257SE21086

Reexamination Certificate

active

07820508

ABSTRACT:
A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.

REFERENCES:
patent: 6458653 (2002-10-01), Jang
patent: 6667209 (2003-12-01), Won et al.
patent: 2002/0019107 (2002-02-01), Lin et al.
patent: 2005/0245026 (2005-11-01), Kim et al.
patent: 2007/0093055 (2007-04-01), Chou et al.
patent: 10/20020057698 (2002-07-01), None
patent: 1020030067821 (2003-08-01), None
patent: 1020040110281 (2004-12-01), None

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