Semiconductor device having capacitor and manufacturing method t

Details Semiconductor device having capacitor and manufacturing method t Semiconductor device having capacitor and manufacturing method t

1997-10-15

2000-06-27

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438250, 438253, 438393, 438396, H01L 218242

Patent

active

060806176

ABSTRACT:
A semiconductor device comprising an integrated circuit and a capacitor. In this capacitor, a bottom electrode, a dielectric film and a top electrode are formed, independently of the integrated circuit, on the interlayer insulating film, and the top electrode and bottom electrode are connected with metal interconnections through contact holes opened in the protective film for protecting the surface of the capacitor. In this constitution, either the top electrode or the bottom electrode is connected the bias line of the integrated circuit, and the other is connected to the ground line, so that extraneous emission may be reduced without having to connect the capacitor outside.

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