Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-02-06
2007-02-06
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S704000, C438S743000, C438S756000
Reexamination Certificate
active
11149571
ABSTRACT:
Semiconductor devices having a contact window and fabrication methods thereof are provided. A lower dielectric layer, conductive patterns and an upper dielectric layer are formed sequentially on a semiconductor substrate. The lower dielectric layer has a higher isotropic etch rate than that of the upper dielectric layer. The upper dielectric layer and the lower dielectric layer are patterned by anisotropic etching to form a trench without exposing the semiconductor substrate. The resultant structure is subject to isotropic etching to expose the substrate and to form a contact window having a wider width in a lower region than in an upper region without damaging the semiconductor substrate.
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Jeon Jeong-Sic
Kim Jae-Woong
Marger & Johnson & McCollom, P.C.
Norton Nadine G.
Tran Binh X.
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