Semiconductor device gate structure including a gettering layer

Details Semiconductor device gate structure including a gettering layer Semiconductor device gate structure including a gettering layer

2011-08-02

2011-08-02

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Gettering of substrate

By layers which are coated, contacted, or diffused

C438S460000, C438S473000, C257SE21321, C257SE29108

Reexamination Certificate

active

07989321

ABSTRACT:
A method is provided that allows for maintaining a desired equivalent oxide thickness (EOT) by reducing the thickness of an interfacial layer in a gate structure. An interfacial layer is formed on a substrate, a gate dielectric layer such as, a high-k gate dielectric, is formed on the interfacial layer. A gettering layer is formed on the substrate overlying the interfacial layer. The gettering layer may function to getter oxygen from the interfacial layer such that the interfacial layer thickness is decreased and/or restricted from growth.

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