Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-27
2008-10-07
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S289000, C438S290000, C438S275000, C257SE29160, C257SE21151, C257SE21623
Reexamination Certificate
active
07432164
ABSTRACT:
A method for making a semiconductor device includes providing a first substrate region and a second substrate region, wherein at least a part of the first substrate region has a first conductivity type and at least a part of the second substrate region has a second conductivity type different from the first conductivity type. The method further includes forming a dielectric layer over at least a portion of the first substrate region and at least a portion of the second substrate region. The method further includes forming a metal-containing gate layer over at least a portion of the dielectric layer overlying the first substrate region. The method further includes introducing dopants into at least a portion of the first substrate region through the metal-containing gate layer.
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Adetutu Olubunmi O.
Gilmer David C.
Tobin Philip J.
Freescale Semiconductor Inc.
Hill Daniel D.
Jr. Carl Whitehead
Luke Daniel
Singh Ranjeev K.
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