Semiconductor device capacitors with oxide-nitride layers...

Details Semiconductor device capacitors with oxide-nitride layers... Semiconductor device capacitors with oxide-nitride layers...

2006-03-22

2008-09-09

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C438S396000, C257SE21170, C257SE21320, C257SE21311, C257SE21135, C257SE21253, C257SE21646, C257SE21647

Reexamination Certificate

active

07422943

ABSTRACT:
Capacitors having upper electrodes that include a lower electrode, a dielectric layer and an upper electrode that includes a conductive metal nitride layer and a doped polysilicon germanium layer are provided. At least part of the conductive metal nitride layer is oxidized and/or at least part of the dielectric layer is nitridized.

REFERENCES:
patent: 4510516 (1985-04-01), Bartelink
patent: 5998824 (1999-12-01), Lee
patent: 6080623 (2000-06-01), Ono
patent: 6677205 (2004-01-01), Beintner
patent: 6753618 (2004-06-01), Basceri et al.
patent: 6987042 (2006-01-01), Beintner et al.
patent: 1020040057535 (2004-07-01), None
patent: 1020050005726 (2005-01-01), None

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