Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Outside periphery of package having specified shape or...
Reexamination Certificate
2005-08-29
2009-12-15
Chu, Chris C (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Outside periphery of package having specified shape or...
C257SE23061, C257S701000, C257S678000, C438S107000, C361S777000
Reexamination Certificate
active
07633159
ABSTRACT:
A sacrificial substrate for fabricating semiconductor device assemblies and packages with edge contacts includes conductive elements on a surface thereof, which are located so as to align along a street between each adjacent pair of semiconductor devices on the device substrate. A semiconductor device assembly or package includes a semiconductor device, a redistribution layer over an active surface of the semiconductor device, and dielectric material coating at least portions of an outer periphery of the semiconductor device. Peripheral sections of contacts are located on the peripheral edge and electrically isolated therefrom by the dielectric coating. The contacts may also include upper sections that extend partially over the active surface of the semiconductor device. The assembly or package may include any type of semiconductor device, including a processor, a memory device, and emitter, or an optically sensitive device.
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Boon Suan Jeung
Chia Yong Poo
Eng Meow Koon
Low Siu Waf
Chu Chris C
Micro)n Technology, Inc.
TraskBritt
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