Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-01-22
2009-08-25
Parker, Kenneth A (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S455000, C257S019000, C257SE21567
Reexamination Certificate
active
07579229
ABSTRACT:
In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like of the same group as Si, a strain is applied by a strain applying semiconductor layer 2 to a channel forming layer I having a channel of the field effect transistor formed therein so that the mobility of carriers in the channel is made larger than the mobility of carriers in that material of the channel forming layer which is unstrained.
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Miyao Masanobu
Nakagawa Kiyokazu
Sugii Nobuyuki
Yamaguchi Shin'ya
Diaz José R
Mattingly & Malur, P.C.
Parker Kenneth A
Renesas Technology Corp.
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