Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-14
2009-02-24
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S003000, C438S239000, C257S295000, C257S296000
Reexamination Certificate
active
07494866
ABSTRACT:
Disclosed are a semiconductor device and a related method of manufacture. The semiconductor device comprises a semiconductor substrate, a conductive structure including contact regions and gate structures formed on the semiconductor substrate, a protection layer formed on the gate structures, an insulation layer formed on the protection layer, and a plurality of contacts directly contacting the contact regions and the semiconductor substrate through the insulation layer, wherein the contacts have substantially different heights from each other.
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Byun Kyung-Rae
Ham Jin-Hwan
Joo Suk-Ho
Kim Hee-Seok
Ko Hwa-Young
Nguyen Ha Tran T
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
Whalen Daniel
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