Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-01-25
2011-01-25
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S303000, C257S018000, C257S019000, C257SE21431, C257SE21634, C257SE21636, C257SE21637, C257SE21640, C257S527000, C257S529000
Reexamination Certificate
active
07875521
ABSTRACT:
A method of fabricating a semiconductor device is disclosed that is able to suppress a short channel effect and improve carrier mobility. In the method, trenches are formed in a silicon substrate corresponding to a source region and a drain region. When epitaxially growing p-type semiconductor mixed crystal layers to fill up the trenches, the surfaces of the trenches are demarcated by facets, and extended portions of the semiconductor mixed crystal layers are formed between bottom surfaces of second side wall insulating films and a surface of the silicon substrate, and extended portion are in contact with a source extension region and a drain extension region.
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Hatada Akiyoshi
Katakami Akira
Ohta Hiroyuki
Shimamune Yosuke
Tamura Naoyoshi
Abdelaziez Yasser A
Fujitsu Semiconductor Limited
Mulpuri Savitri
Westerman Hattori Daniels & Adrian LLP
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